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US 2004/0005724 A1Published application
Ferroelectric memory device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-Mann Lee, Yong-Tak Lee, Hyeong-Geun An
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Abstract
The method of forming a ferroelectric memory device includes forming capacitor patterns over a substrate, each capacitor pattern having an adhesive assistant pattern, a lower electrode, a ferroelectric pattern, and an upper electrode. An oxygen barrier layer is formed over the substrate and is etched to expose a sidewall of the ferroelectric pattern but not a sidewall of the adhesive assistant pattern. Then, a thermal process for curing ferroelectricity of the ferroelectric pattern is performed.
Claims11
A method of forming a ferroelectric memory device, comprising:
- forming at least one capacitor pattern over a substrate, each capacitor pattern having an adhesive assistant pattern, a lower electrode, a ferroelectric pattern, and an upper electrode;
- forming an oxygen barrier layer over the substrate;
- etching the oxygen barrier layer to expose a sidewall of the ferroelectric pattern but not a sidewall of the adhesive assistant pattern;
- and
- performing a thermal process for curing ferroelectricity.
2 more elements
Dependencies are inferred from the claim text.