Semiconductor-device design method, semiconductor-device design program and semiconductor-device design apparatus

A semiconductor-device design program considering change in capacitance due to a dummy pattern, the program making a computer

• receive dummy rule information about rules for dummy patterns and process information about wiring structure of wiring patterns,
• calculate a capacitance value for each of wiring distances between the wiring patterns defined by the process information, under the condition that a dummy pattern defined by the dummy rule information is inserted between the wiring patterns, and
• calculate capacitance values between wiring patterns of an intended semiconductor device defined by data stored in a storage device, referring to the calculated capacitance value for each of the wiring distances.

A recording medium readable by a computer on which a semiconductor-device design program considering change in capacitance due to a dummy pattern is recorded, the program making a computer

• receive dummy rule information about rules for dummy patterns and process information about wiring structure of wiring patterns,
• calculate a capacitance value for each of wiring distances between the wiring patterns defined by the process information, under the condition that a dummy pattern defined by the dummy rule information is inserted between the wiring patterns, and
• calculate capacitance values between wiring patterns of an intended semiconductor device defined by data stored in a storage device, referring to the calculated capacitance value for each of the wiring distances.

A semiconductor-device design apparatus considering change in capacitance due to a dummy pattern, comprising:

• an information reception part for receiving dummy rule information about rules for dummy patterns and process information about wiring structure of wiring patterns,
• a capacitance calculation part for calculating a capacitance value for each of wiring distances between the wiring patterns defined by the process information, under the condition that a dummy pattern defined by the dummy rule information is inserted between the wiring patterns, and
• a wiring-pattern capacitance calculation part for calculating capacitance values between wiring patterns of an intended semiconductor device defined by data stored in a storage device, referring to the calculated capacitance value for each of the wiring distances.