Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use

A method of processing a single wafer, comprising:

• rotating a wafer in a wafer holding bracket;
• mixing at point-of-use cleaning solution that includes a carboxylic acid based chelating agent and an oxidizer;
• and
• using the cleaning solution to clean the wafer prior to degradation of the chelating agent by the oxidizer.

A method of using a point-of-use mixing system, comprising:

• pre-mixing NH4OH with a chelating agent that is a carboxylic acid;
• filling a first constant volume vessel with the chelating agent and NH4OH pre-mix to a first measured volume;
• transferring the measured volume from the first constant volume vessel into a point-of-use mixing vessel;
• transferring an oxidizer into the point-of-use mixing vessel;
• adding water to the point-of-use mixing vessel;
• transferring the contents of the point-of-use mixing vessel into a wafer cleaning chamber.

A single wafer cleaning chamber, comprising:

• a rotatable bracket capable of holding a wafer;
• a chemical point-of-use mixing system;
• and
• a nozzle capable of flowing the chemicals from the chemical point-of-use mixing system onto a wafer.

An apparatus, comprising:

• a rotatable bracket capable of holding a wafer;
• means for a point-of-use mixing of chemicals;
• and
• a nozzle for flowing the mixed chemicals onto the wafer.