Polishing apparatus, polishing method and method of manufacturing semiconductor device

A polishing method comprising:

• positioning a treating substrate held by a substrate holder over a turntable so as to enable said treating substrate to press-contact with a polishing region of a polishing surface of said turntable, said polishing surface having said polishing region where said treating substrate moves relative thereto, and a non-polishing region surrounded by said polishing region;
• introducing a first liquid and a second liquid into a slurry mixing section disposed at said non-polishing region of said polishing surface, at least one of said first and second liquids containing an abrasive component;
• and
• applying a mixed slurry comprising said first and second liquids which have been mixed together in advance in said slurry mixing section to said polishing surface while rotating said turntable to enable said treating substrate to move relative to said polishing region, thereby polishing said treating substrate.

A method for manufacturing a semiconductor device comprising:

• forming an insulating film above a surface of a semiconductor substrate;
• forming a recessed portion in said insulating film;
• depositing a conductive material in said recessed portion as well as above said insulating film, to form a conductive layer;
• and
• removing the portion of said conductive material that has been deposited above said insulating film outside said recessed portion to leave said conductive material in said recessed portion;
• wherein at least part of said conductive material deposited above said insulating film is removed by:
• positioning said semiconductor substrate held by a substrate holder over a turntable so as to enable said semiconductor substrate to press-contact with a polishing region of a polishing surface of said turntable, said polishing surface having said polishing region where said semiconductor substrate moves relative thereto, and a non-polishing region surrounded by said polishing region;
• introducing a first liquid and a second liquid into a slurry mixing section disposed at said non-polishing region of said polishing surface, at least one of said first and second liquids containing an abrasive component;
• and
• applying a mixed slurry comprising said first and second liquids which has been mixed together in advance in said slurry mixing section to said polishing surface while rotating said turntable to enable said semiconductor substrate to move relative to said polishing region, thereby polishing said conductive material.