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US 2004/0002226 A1Published application
Method for fabricating a nitrided silicon-oxide gate dielectric
AssigneeInternational Business Machines Corporation
InventorsJay S. Burnham, Anthony I. Chou, Toshiharu Furukawa, Margaret L. Gibson, James S. Nakos, Steven M. Shank
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Abstract
A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.
Claims20
A method of fabricating a gate dielectric layer, comprising:
- providing a substrate;
- forming a silicon dioxide layer on a top surface of said substrate;
- exposing said silicon dioxide layer to a plasma nitridation to convert said silicon dioxide layer into a silicon oxynitride layer;
- and
- performing a spiked rapid thermal anneal of said silicon oxynitride layer.
2 more elements
A method of fabricating a MOSFET, comprising:
- providing a silicon substrate;
- forming a silicon dioxide layer on a top surface of said silicon substrate;
- exposing said silicon dioxide layer to a plasma nitridation to convert said silicon dioxide layer to a silicon oxynitride layer;
- performing a spiked rapid thermal anneal of said silicon oxynitride layer;
- forming a polysilicon gate on said annealed silicon oxynitride layer aligned over a channel region in said silicon substrate;
- and
- forming source/drain regions in said silicon substrate, said source drain regions aligned to said polysilicon gate.
4 more elements
Dependencies are inferred from the claim text.