Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorIchiro Mizushima
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Abstract
A method of purging a semiconductor manufacturing apparatus comprises a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer by using an etching gas containing at least a halogen gas, and a step of purging a cleaning gas remaining in the chamber by causing a gas containing hydrogen to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas.
Claims20
A method of purging a semiconductor manufacturing apparatus, comprising:
- a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD method over a semiconductor wafer, by using an etching gas containing at least a halogen gas;
- and
- a step of purging a cleaning gas remaining in the chamber by causing a gas containing hydrogen to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas.
A method of purging a semiconductor manufacturing apparatus, comprising:
- a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer, by using an etching gas containing at least a halogen gas;
- and
- a step of purging a cleaning gas remaining in the chamber by causing a gas containing water-vapor to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas.
A method of purging a semiconductor manufacturing apparatus, comprising:
- a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer, by using an etching gas containing at least a halogen gas;
- and
- a step of purging a cleaning gas remaining in the chamber by causing a gas containing a substance, which becomes alkali upon being dissolved in water, to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas after the step of etching the CVD-deposited film by using the cleaning gas.
A method of purging a semiconductor manufacturing apparatus, comprising:
- a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer, by using an etching gas containing at least a halogen gas;
- and
- a step of purging a cleaning gas remaining in the chamber by causing ammonia to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas.
Dependencies are inferred from the claim text.