Interconnect structure and method for forming
OwnerCindy K. Goldberg, Yeong-Jyn T. Liiinventors
Life of this patent
Estimating the term…
Abstract
An interconnect structure with a via (66) embedded in a first low dielectric constant material (44) and a trench (66) embedded in a second low dielectric constant material (48), which is a different material than the first low dielectric constant material (44), is formed. In one embodiment, the second low dielectric constant material (48) is used as a mask for etching the first low dielectric constant material (44). Also, in one embodiment, the first low dielectric constant material (44) may be used as an etch stop layer for etching the second low dielectric constant material. The second low dielectric constant material (48) may include silicon and oxygen and the first low dielectric constant material (44) may be organic.
Claims23
A semiconductor device having an interconnect structure comprising:
- a semiconductor substrate;
- a first low dielectric constant layer formed over the semiconductor substrate;
- a conductor-filled via embedded within the first low dielectric constant layer;
- a second low dielectric constant layer over the first low dielectric constant layer, wherein the second low dielectric constant layer is different than the first low dielectric constant layer;
- and
- a conductor-filled trench embedded within the second dielectric constant layer.
A method of forming a semiconductor device comprising:
- providing a semiconductor substrate;
- forming a first low dielectric constant layer over the semiconductor substrate;
- forming a second low dielectric constant layer over the first low dielectric constant layer;
- forming a first patterned photoresist layer over the second low dielectric constant layer;
- etching the second low dielectric constant layer with a first chemistry selective to the first low dielectric constant layer using the first patterned photoresist layer as a first mask to form a first opening;
- etching the first low dielectric constant layer with a second chemistry to form a second opening, wherein the first low dielectric constant layer is different than the second low dielectric constant layer, and the second chemistry is different than the first chemistry;
- and
- filling the first opening and the second opening with a conductive material.
A method of forming a semiconductor device comprising:
- providing a semiconductor substrate;
- forming a first low dielectric constant layer over the semiconductor substrate;
- forming a second low dielectric constant layer over the first low dielectric constant layer;
- forming a first patterned photoresist layer over the second low dielectric constant layer;
- etching the second low dielectric constant layer with a first chemistry selective to the first low dielectric constant layer using the first patterned photoresist layer as a first mask to form a first opening and exposing the first low dielectric constant material;
- removing the first patterned photoresist layer;
- etching the first low dielectric constant layer with a second chemistry using at least the second low dielectric constant layer as a second mask to form a second opening, wherein the first low dielectric constant layer is different than the second low dielectric constant layer, and the second chemistry is different than the first chemistry;
- forming a second patterned photoresist layer over the second low dielectric constant layer;
- etching the second low dielectric constant layer using the second patterned photoresist layer as a mask to form a third opening;
- and
- filling the second opening and the third opening with a conductive material.
Dependencies are inferred from the claim text.