Method of manufacturing semiconductor device having multilevel wiring
AssigneeFujitsu Limited
InventorsYukio Takigawa, Shun-ichi Fukuyama
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielectric constant insulating layer having a specific dielectric constant lower than the specific dielectric constant of silicon oxide on the first hydrophobic insulating layer having a bydrophilized surface. A semiconductor device manufacturing method which can suppress peel-off of a low dielectric constant insulating layer from an underlying hydrophobic layer is provided.
Claims20
A method of manufacturing a semiconductor device comprising the steps of:
- (X) forming a first hydrophobic insulating layer above a semiconductor substrate;
- (Y) hydrophilizing a surface of said first hydrophobic insulating layer;
- and
- (Z) forming a low dielectric constant insulating layer having a specific dielectric constant lower than a specific dielectric constant of silicon oxide on said first hydrophobic insulating layer having a hydrophilized surface.
Dependencies are inferred from the claim text.