Method of making sub-lithographic features
AssigneeInternational Business Machines Corporation
InventorsSadanand V. Deshpande, Toshiharu Furukawa, David V. Horak, Wesley C. Natzle, Akihisa Sekiguchi, Len Y. Tsou, Qingyun Yang
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Abstract
A method of forming a structure having sub-lithographic dimensions is provided. The method includes: forming a chamfered mandrel on a substrate, the mandrel having an angled surface; and performing an angled ion implantation to obtain an implanted shadow region in the substrate, the implanted shadow mask having at least one sub-lithographic dimension.
Claims29
A method of forming a structure having sub-lithographic dimensions, comprising:
- forming a chamfered mandrel on a substrate, said mandrel having an angled surface;
- and
- performing an angled ion implantation to obtain an implanted shadow region in said substrate, said implanted shadow region having at least one sub-lithographic dimension.
A method of forming a structure having sub-lithographic dimensions, comprising:
- forming a chamfered mandrel on a substrate, said mandrel having a vertical sidewall, a top surface and an angled surface, said angled surface connecting said vertical sidewall to said top surface;
- and
- performing an angled ion implantation to obtain an implanted shadow region in said substrate, said implanted shadow region having at least one sub-lithographic dimension.
A method of forming a structure having sub-lithographic dimensions, comprising the steps of:
- (a) forming a first hard mask layer on a substrate;
- (b) forming a chamfered mandrel on said substrate, said mandrel having a vertical sidewall, a top surface and an angled surface, said angled surface connecting said vertical sidewall to said top surface;
- (c) forming a second hard mask layer over said chamfered mandrel and portions of said first hard mask not protected by said chamfered mandrel;
- (d) performing an angled ion implantation into said second hard mask layer to form an implanted region and an un-implanted region in said second hard mask layer;
- (e) removing either said un-implanted region or said implanted region;
- and
- (f) removing portions of said first hard mask layer exposed by step (e) to form an image in said first hard mask layer, said image having at least one sub-lithographic dimension.
Dependencies are inferred from the claim text.