Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions As3+;
• and
• implanting said N-type As3+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions As4Hx+, where x is an integer and 1≦x≦6;
• implanting said N-type dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions As3 Hx+, where x is an integer and 1≦x≦5;
• and
• implanting said N-type As3 Hx+, cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions P4+;
• and
• implanting said N-type P4+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions P3+;
• and
• implanting said N-type P3+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

The method as recited in claim 47, further including the step of controlling the temperature of said ionization chamber to a predetermined value.

The method as cited in claim 50, further including the step of mass analyzing the extracted ions by selecting the P3+ species.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type dopant cluster ions P2+;
• and
• implanting said N-type P2+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type cluster dopant ions P4Hx+, where x is an integer and 1≦x≦6;
• and
• implanting said N-type P4Hx+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating N-type cluster dopant ions P3Hx+, where x is an integer and 1≦x≦5;
• and
• implanting said N-type P3Hx+ dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating an N-type cluster dopant ions P2Hx+, where x is an integer and 1≦x≦4 and
• implanting said N-type P2Hx+, dopant cluster ions into a first region of said substrate resulting in N-type doping of said substrate.

A method of implanting a cluster ion dopant material into a semiconductor substrate comprising the steps of:

• generating a dopant ion cluster, BnHx+, where n and x are integers and 2≦n≦9 and 0≦x≦14;
• and
• implanting said dopant ion cluster into a first region of said substrate.

The method as cited in claim 95, further including the step of mass analyzing the extracted ions by selecting said dopant cluster ions.

A method of implanting dopant materials into a semiconductor substrate comprising:

• generating P-type negative decaborane cluster dopant ions (B10Hx−), where x is an integer and 0≦x≦14;
• and
• implanting said negative decaborane (B10Hx−) dopant cluster ions into a first region on said substrate resulting in P-type doping of said substrate.

A semiconductor device comprising:

• a substrate having one or more N-type regions formed from an N-type material;
• and
• a P-type dopant implanted into said N-type region, said P-type dopant formed by implantation of negative decaborane cluster ions B10Hx− into said p-type region, where x is an integer and 0≦x≦14.

A method of forming cluster ions comprising:

• providing a supply of dopant atoms into an ionization chamber;
• and
• combining the dopant atoms into clusters containing a plurality of dopant atoms.

A method of forming cluster ions comprising:

• providing a supply of dopant molecules into an ionization chamber;
• and
• combining the dopant molecules into clusters containing a plurality of dopant molecules.