Method of producing an SOI wafer
AssigneeSEH America, Inc.
InventorSergei V. Koveshnikov
Life of this patent
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Abstract
A semiconductor wafer manufacturing is disclosed wherein an SOI wafer is produced by annealing a polysilicon layer deposited on a substrate wafer in an oxygen-containing ambient, and annealing the wafer at high temperatures to form an oxide layer at the interface of the substrate wafer and polysilicon layer. During the high temperature anneal, the polycrystalline silicon layer also recrystallizes to a monocrystalline state, and replicates the lattice structure of the substrate wafer.
Claims21
A method of producing an SOI wafer, comprising:
- polishing at least one surface of a silicon semiconductor substrate wafer, the substrate wafer having a monocrystalline lattice structure;
- cleaning the polished surface of the substrate wafer;
- depositing a polysilicon layer on the polished surface of the substrate wafer;
- annealing in an oxygen-containing ambient;
- and
- performing a high-temperature annealing step, wherein the oxygen introduced during oxidizing forms a insulation layer, and wherein the polysilicon layer recrystallizes into a monocrystalline structure having the same lattice structure as the substrate wafer.
An SOI wafer manufactured by the steps of polishing at least one surface of a silicon substrate wafer, cleaning the substrate wafer, depositing a polysilicon layer on the polished surface of the substrate wafer, annealing the wafer in an oxygen-containing ambient, and subjecting the wafer to a high temperature anneal, wherein the high temperature anneal forms an insulating layer at the surface of the substrate wafer, and wherein the polysilicon layer is recrystallized to a monocrystalline state.
Dependencies are inferred from the claim text.