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US 2004/0002183 A1Published application
CVD deposition of M-ON gate dielectrics
OwnerLuigi Colombo, Mark R. Visokay +2inventors
InventorsLuigi Colombo, Mark R. Visokay, Malcom J. Bevan, Antonio L. P. Rotondaro
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Abstract
A method for forming a high-k gate dielectric film (106) by CVD of a M-N or M-ON, such as HfON. Post deposition anneals are used to adjust the nitrogen concentration.
Claims11
A method for fabricating an integrated circuit, comprising the steps of:
- providing a partially fabricated semiconductor body;
- and
- forming a gate dielectric by depositing a high-k film comprising metal and nitrogen by chemical vapor deposition on a surface of a semiconductor body.
A method for fabricating an integrated circuit, comprising the steps of:
- providing a partially fabricated semiconductor body;
- and
- forming a gate dielectric by:
- chemical vapor deposition of a high-k film comprising metal and nitrogen a surface of a semiconductor body using a metal precursor selected from the group consisting of tetrakis(dimethylamido)metal and tetrakis(diethylamido)metal, where metal is Hf, Zr, La, Y, Gd, Eu, or Pr;
- and a nitrogen-containing precursor.
2 more elements
Dependencies are inferred from the claim text.