On-wafer burn-in of semiconductor devices using thermal rollover

A semiconductor processing apparatus comprising:

• a current source;
• a microprobe coupled to the current source, the microprobe configured to apply a scan current to a semiconductor device on a wafer under a predetermined ambient temperature, the microprobe also configured to capture data concerning performance characteristics of the semiconductor device during the application of the scan current thereto, wherein the scan current is higher than the normal operating current of the semiconductor devices and the predetermined ambient temperature is higher than the normal operating temperature of the semiconductor devices;
• and
• a processing module coupled to the microprobe, the processing module configured to receive the data captured by the microprobe and to determine whether the semiconductor device is prone to infant mortality based on the data.

A system for burning-in semiconductor devices, comprising:

• a processor;
• and
• a mechanical module coupled to and controlled by the processor, wherein the mechanical module is configured to (1) apply a scan current to the semiconductor devices on a wafer;
• (2) capture data concerning performance characteristics of the semiconductor devices during the application of the scan current thereto, wherein the scan current is higher than the normal operating current of the semiconductor devices;
• and wherein the processor is configured to receive the data captured by the mechanical module for determining whether the semiconductor device is prone to infant mortality.