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US 2004/0002009 A1Published application
Re-usable extreme ultraviolet lithography multilayer mask blank
AssigneeIntel Corporation
InventorPei-Yang Yan
Life of this patent
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Abstract
An embodiment of the present invention includes an outer capping layer, a multilayer (ML) stack, and an inner capping layer. The outer capping layer is made of an outer material and has an outer thickness. The multilayer (ML) stack is below the outer capping layer. The inner capping layer is made of an inner material and has an inner thickness and is located between the ML stack and a ML reflector. The inner thickness is selected to enable constructive interference between the ML stack and the ML reflector.
Claims30
An apparatus comprising:
- an outer capping layer made of an outer material and having an outer thickness;
- a multilayer (ML) stack below the outer capping layer;
- and
- an inner capping layer made of at least an inner material and having an inner thickness and located between the ML stack and a ML reflector, the inner thickness being selected to enable constructive interference between the ML stack and the ML reflector.
1 more element
A method comprising:
- depositing an inner capping layer on a multilayer (ML) reflector, the inner capping layer being made of at least an inner material and having an inner thickness;
- depositing a ML stack on the inner capping layer;
- and
- depositing an outer capping layer made of an outer material and having an outer thickness;
- wherein the inner thickness is selected to enable constructive interference between the ML stack and the ML reflector.
2 more elements
A mask blank comprising:
- a substrate made of a low thermal expansion material;
- a multilayer (ML) reflector on the substrate;
- and
- a re-usable coating on the substrate, the re-usable coating comprising:
- an outer capping layer made of an outer material and having an outer thickness;
- a ML stack below the outer capping layer, and
- an inner capping layer made of at least an inner material and having an inner thickness and located between the ML stack and the ML reflector, the inner thickness being selected to enable constructive interference between the ML stack and the ML reflector.
4 more elements
Dependencies are inferred from the claim text.