Light emitting device and manufacturing method therefor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoshi Seo, Hiroko Yamazaki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoshi Seo, Hiroko Yamazaki
Estimating the term…
To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).
A light emitting device comprising:
A light emitting device comprising:
A light emitting device comprising:
A light emitting device comprising:
A light emitting device comprising:
A light emitting device comprising:
Dependencies are inferred from the claim text.