US 2004/0000728 A1 · Resin-sealed semiconductor device, and die bonding material and sealing material for use therein

Abstract

A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: σe≦0.2×σb formula (1) Ui≧2.0×10−6×σei formula (2) Ud≧4.69×10−6×ed formula (3) wherein σb (MPa)represents the flexural strength at break of the sealing material at 25°, Ui (N·m) and Ud (N·m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where σe=(1/log(kd1))×Ee1×(αm−αe1)×ΔT1 formula (4), σei=Ee2×(αe2−αm)×ΔT2 formula (5), σed=log(kd2)×Ee2×(αe2−αm)×ΔT2 Formula (6), kd1: a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° to 1 MPa of elastic modulus (Ed1>1 MPa), kd2: a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed2>1 MPa), Ee1: a flexural modulus (MPa) of the sealing material at 25°, Ee2: a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, αe1: an average thermal expansion coefficient (1/° C.) of the sealing material from forming temperature for the semiconductor to room temperature (25° C.), αe2: an average thermal expansion coefficient (1/° C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, αm: a thermal expansion coefficient (1/° C.) of the lead frame, ΔT1: the difference (° C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and ΔT2: the difference (° C.) between the forming temperature for the semiconductor and the peak temperature during soldering.

Claims24

Dependent claims

A resin-sealed semiconductor device, comprising:

at least one semiconductor chip mounted on a die bond pad of a lead frame with a die bonding material interposed therebetween and sealed by a encapsulating material, wherein
the die bonding material at 25° C. after curing has a flexural elastic modulus Ed1 of 1 MPa or more but not exceeding 300 MPa, and
the properties of the encapsulating material and the die bonding material after curing satisfy an equation (1),
σe≦0.2×σb equation (1),
where
σb:
a flexural strength (MPa) of the encapsulating material at 25° C.;
σe=(1/log(kd1))×Ee1×(αm−αe1)×ΔT1;
kd1:
a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° C. to an elastic modulus of 1 MPa (Ed1>1 MPa);
Ee1:
a flexural elastic modulus (MPa) of the encapsulating material at 25° C.;
αe1:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to 25° C.;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
and
ΔT1:
a temperature difference (° C.) between the formation temperature of the semiconductor device and a temperature on the low temperature side of the heat cycle.

16 more elements

A resin-sealed semiconductor device, comprising:

a lead frame including a die bond pad and an inner lead,
a semiconductor chip placed on the die bond pad with a die bonding material interposed therebetween, and
a encapsulating material encapsulating the semiconductor chip and the lead frame, wherein
when a shear strain energy of the encapsulating material against the inner lead at a peak temperature during solder mounting is Ui;
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud, properties of the die bonding material and the encapsulating material after curing satisfy at least one of the following equations (2) and (3),
Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σei=Ee2×(αe2×αm)×ΔT2;
σed=log(kd2)×Ee2×(αe2−αm)×ΔT2;
kd2:
a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at a peak temperature during solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa);
Ee2:
a flexural elastic modulus (MPa) of the encapsulating material at the peak temperature during the solder mounting;
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

17 more elements

A die bonding material for mounting a semiconductor chip on a die bond pad of a lead frame used in a resin-sealed semiconductor device including the semiconductor chip sealed by a encapsulating material, the lead frame including the die bond pad and an inner lead, wherein

when a flexural elastic modulus of the die bonding material at a peak temperature during solder mounting after curing is Ed2;
a ratio of the flexural elastic modulus Ed2 of the die bonding material at the peak temperature during the solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa) is kd2;
a shear strain energy of the encapsulating material against the inner lead at the peak temperature during the solder mounting is Ui;
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud, a property relation between the die bonding material and the encapsulating material after curing satisfy at least one of the following equations (2) and (3),
Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σei=Ee2×(αe2−αm)×ΔT2;
σed=log(kd2)×Ee2×(αe2−αm)×ΔT2;
Ee2:
a flexural elastic modulus (MPa) of the encapsulating material at the peak temperature during the solder mounting;
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

14 more elements

A encapsulating material for encapsulating a semiconductor chip mounted on a die bond pad of a lead frame by a die bonding material to manufacture a semiconductor device, the lead frame including the die bond pad and an inner lead, wherein

when a shear strain energy of the encapsulating material against the inner lead at a peak temperature during solder mounting is Ui;
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud, a property relation between the encapsulating material and the die bonding material after curing satisfy at least one of the following equations (2) and (3),
Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σei=Ee2×(αe2−αm)×ΔT2;
σed=log(kd2)×Ee2×(αe2−αm)×ΔT2;
kd2:
a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa);
Ee2:
a flexural elastic modulus (MPa) of the encapsulating material at the peak temperature during the solder mounting;
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

14 more elements

A resin-sealed semiconductor device, comprising:

a lead frame including a die bond pad and an inner lead,
a semiconductor chip placed on the die bond pad with a die bonding material interposed therebetween;
and
a encapsulating material encapsulating the semiconductor chip and the lead frame, wherein
when a flexural strength of the encapsulating material at 25° C. is σb (MPa);
a shear strain energy of the encapsulating material against the inner lead at a peak temperature during solder mounting is Ui (N·m);
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud(N·m), properties of the die bonding material and the encapsulating material after curing satisfy at least one of the following equations (1), (2) and (3),
σe≦0.2×σb equation (1), Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σe=(1/log(kd1))×Ee1×(αm−αe1)×ΔT1 equation (4);
σei=Ee2×(αe2−αm)×ΔT2 equation (5);
σed=log(kd2)×Ee2×(αe2×αm)×ΔT2 equation (6);
kd1:
a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° C. to an elastic modulus of 1 MPa (Ed1>1 MPa);
kd2:
a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa);
Ee1:
a flexural elastic modulus (MPa) of the encapsulating material at 25° C.;
Ee2:
a flexural elastic modulus (MPa) of the encapsulating material at the peak temperature during the solder mounting;
αe1:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to a room temperature (25° C.);
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from the formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
ΔT1:
a temperature difference (° C.) between the formation temperature of the semiconductor device and a temperature on the low temperature side of the heat cycle;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

28 more elements

A die bonding material for mounting a semiconductor chip on a die bond pad of a lead frame used in a resin-sealed semiconductor device including the semiconductor chip sealed by an encapsulating material, the lead frame including the die bond pad and an inner lead, wherein

when a flexural elastic modulus of the die bonding material at 25° C. is Ed1 (MPa);
a flexural elastic modulus of the die bonding material at a peak temperature during solder mounting is Ed2 (MPa);
a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° C. to an elastic modulus of 1 MPa (Ed1>1 MPa) is kd1;
a ratio of the flexural elastic modulus Ed2 of the die bonding material at the peak temperature during the solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa) is kd2;
a flexural strength of the encapsulating material at 25° C. is cub (MPa);
a shear strain energy of the encapsulating material against the inner lead at the peak temperature during the solder mounting is Ui (N·m);
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud (N·m), properties of the die bonding material and the encapsulating material after curing satisfy at least one of the following equations (1), (2) and (3),
σe≦0.2×σb equation (1), Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σe=(1/log(kd1))×Ee1×(αm−αe1)×ΔT1 equation (4);
σei=Ee2×(αe2−αm)×ΔT2 equation (5);
σed=log(kd2)×Ee2×(αe2−αm)×ΔT2 equation (6);
Ee1:
a flexural elastic modulus (MPa) of the encapsulating material at 25° C.;
Ee2:
a flexural elastic modulus (MPa) of the encapsulating material at the peak temperature during the solder mounting;
αe1:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from a formation temperature of the semiconductor device to a room temperature (25° C.);
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from the formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
ΔT1:
a temperature difference (° C.) between the formation temperature of the semiconductor device and a temperature on the low temperature side of the heat cycle;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

24 more elements

A encapsulating material for encapsulating a semiconductor chip with an encapsulating material to manufacture a semiconductor device, the semiconductor chip being mounted on a die bond pad of a lead frame by a die bonding material, the lead frame including the die bond pad and an inner lead, wherein

when a flexural strength of the encapsulating material at 25° C. is σb (MPa);
a flexural elastic modulus of the encapsulating material at 25° C. is Ee1 (MPa);
a flexural elastic modulus of the encapsulating material at a peak temperature during solder mounting is Ee2 (MPa);
a shear strain energy of the encapsulating material against the inner lead at the peak temperature during the solder mounting is Ui (N·m);
and a shear strain energy of the encapsulating material against the die bond pad at the peak temperature during the solder mounting is Ud (N·m), a property relation between the die bonding material and the encapsulating material after curing satisfy at least one of the following equations (1), (2) and (3),
σe≦0.2σb equation (1), Ui≧2.0×10−6×σei equation (2), Ud≧4.69×10−6×σed equation (3),
where
σe=(1/log(kd1))×Ee1×(αm−αe1)×ΔT1 equation (4);
σei=Ee2×(αe2−αm)×ΔT2 equation (5);
σed=log(kd2)×Ee2×(αe2−αm)×ΔT2 equation (6);
kd1:
a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° C. to an elastic modulus of 1 MPa (Ed1>1 MPa);
kd2:
a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the solder mounting to an elastic modulus of 1 MPa (Ed2>1 MPa);
αe1:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from the formation temperature of the semiconductor device to a room temperature (25° C.);
αe2:
an average coefficient of thermal expansion (1/° C.) of the encapsulating material from the formation temperature of the semiconductor device to the peak temperature during the solder mounting;
αm:
a coefficient of thermal expansion (1/° C.) of the lead frame;
ΔT1:
a temperature difference (° C.) between the formation temperature of the semiconductor device and a temperature on the low temperature side of the heat cycle;
and
ΔT2:
a temperature difference (° C.) between the formation temperature of the semiconductor device and the peak temperature during the solder mounting.

22 more elements

Dependencies are inferred from the claim text.

Resin-sealed semiconductor device, and die bonding material and sealing material for use therein

Life of this patent

Resin-sealed semiconductor device, and die bonding material and sealing material for use therein

Life of this patent

Abstract

Claims24