Method of protecting a seed layer for electroplating
AssigneeIntel Corporation
InventorsValery M. Dubin, Peter K. Moon
Life of this patent
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Abstract
The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing the protection layer and forming a conductor over the seed layer. The present invention further includes a structure having a substrate, the substrate having a device; an insulator disposed over the substrate, the insulator having an opening, the opening disposed over the device; a barrier layer disposed over the opening; a seed layer disposed over the barrier layer; and a protection layer disposed over the seed layer.
Claims16
A method comprising:
- providing a substrate;
- sequentially forming a seed layer over said substrate and forming a protection layer over said seed layer;
- and
- sequentially removing said protection layer and forming a conductor over said seed layer.
A method comprising:
- providing a substrate, said substrate having a device;
- forming an insulator over said substrate;
- forming an opening in said insulator over said device;
- forming a barrier layer over said opening and said insulator;
- sequentially forming a seed layer over said barrier layer and forming a protection layer over said seed layer;
- and
- sequentially removing said protection layer and forming a conductor over said seed layer.
A structure comprising:
- a substrate, said substrate having a device;
- an insulator disposed over said substrate, said insulator having an opening, said opening disposed over said device;
- a barrier layer disposed over said opening;
- a seed layer disposed over said barrier layer;
- and
- a protection layer disposed over said seed layer.
Dependencies are inferred from the claim text.