US 2004/0000719 A1 · Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same

Abstract

A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the under layer. The first conductive portion is formed in a first concave portion which passes through the first insulating layer to the under layer. The first conductive portion includes a first barrier metal layer and a first metal portion. The first barrier metal layer is formed on a side wall and a bottom surface of the first concave portion. The first metal portion is formed on the first barrier metal layer such that the rest of the first concave portion is filled with the first metal portion. The first metal portion includes a first alloy including copper and aluminium.

Claims22

Dependent claims

A semiconductor apparatus comprising:

an under layer formed above a substrate;
a first insulating layer formed on said under layer;
and
a first conductive portion formed in a first concave portion which passes through said first insulating layer to said under layer;
wherein said first conductive portion includes:
a first barrier metal layer formed on a side wall and a bottom surface of said first concave portion;
and
a first metal portion formed on said first barrier metal layer such that the rest of said first concave portion is filled with said first metal portion;
and
said first metal portion includes a first alloy comprising copper and aluminium.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/608,647Filed 27 Jun 2003

Priority

JP 188927/200228 Jun 2002

Published

1 Jan 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10W 20/40
Interconnections in chips, wafers or substrates: interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or…
H10W 20/425
Characterised by their conductive parts: barrier, adhesion or liner layers
H10W 20/4424
The principal metal being copper: copper alloys
H10W 20/47
Characterised by their insulating parts: comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same

Life of this patent

Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same

Life of this patent

Abstract

Claims22