Porous, film, wiring structure, and method of forming the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorNobuo Aoi
Life of this patent
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Abstract
An organic-inorganic hybrid film is deposited on a substrate by introducing, into a vacuum chamber, a gas mixture of a silicon alkoxide and an organic compound and generating a plasma derived from the gas mixture. Then, a hydrogen plasma process is performed with respect to the organic-inorganic hybrid film by introducing, into the vacuum chamber, a gas containing a reducing gas and generating a plasma derived from the gas. As a result, an organic component in the organic-inorganic hybrid film eliminates therefrom and numerous fine holes are formed in hollow portions from which the organic component has eliminated, whereby a porous film composed of the organic-inorganic hybrid film is obtained.
Claims14
A wiring structure comprising:
- a first inter-layer dielectric formed on a substrate and having a contact hole, said first inter-layer dielectric being composed of a porous film having a relatively low porosity;
- a second inter-layer dielectric formed on said first inter-layer dielectric and having a wire groove, said second inter-layer dielectric being composed of a porous film having a relatively high porosity;
- a contact composed of a metal film filled in said contact hole;
- and
- a metal wire composed of a metal film filled in said wire groove.
Dependencies are inferred from the claim text.