Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
AssigneeRensselaer Polytechnic Institute
InventorsLeonard Vincent Interrante, Ning Lu
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Abstract
A hybrid organic/inorganic organosilicon networked polymer material having a compositional formula [Si(O)CH2]n and a dielectric constant of less than 2.4 is provided. The material may be used as an interlayer dielectric film in a semiconductor device. The film is preferably fabricated by a sol-gel process using an alkoxy substituted hyperbranched polycarbosilane precursor material.
Claims37
A hybrid organic/inorganic organosilicon networked polymer material having a compositional formula [Si(O)CH2]n and a dielectric constant of less than 2.4.
A method of making a hybrid organic/inorganic film, comprising:
- providing an alkoxy substituted hyperbranched polycarbosilane precursor material;
- dissolving the precursor material in a solvent to form a solution;
- adding a catalyst to the solution;
- coating the solution over a substrate to form a gelled film;
- and
- curing the gelled film to remove the solvent from the gelled film, such that the hybrid organic/inorganic film with a dielectric constant of less than 2.5 is formed.
A method of making a semiconductor device, comprising:
- providing a semiconductor device located in or over a substrate, and having an interlevel metallization;
- providing a substituted hyperbranched polycarbosilane precursor material;
- dissolving the precursor material in a solvent to form a solution;
- adding a catalyst to the solution;
- coating the solution over the interlevel metallization to form a gelled film;
- and
- curing the gelled film to remove the solvent from the gelled film, such that the hybrid organic/inorganic film with a dielectric constant of less than 2.5 is formed over the interlevel metallization.
Dependencies are inferred from the claim text.