Semiconductor device for sensor system
AssigneeHitachi, Ltd.
InventorsShunzo Yamashita, Kei Suzuki, Toshiyuki Aritsuka, Masayuki Miyazaki, Sadaki Nakano
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Abstract
Disclosed here is a semiconductor device employable for a compact and light sensor system free of battery replacement. The semiconductor device configures a sensor chip (SCHIP1) comprising sensors (TD1, AS1, PD1, GS1), an A/D conversion circuit (AD1), a microprocessor (CPU1), a memory (MEM1), a transmission circuit (RF1), and a power generation circuit (CM1). The sensors, the A/D conversion circuit, the microprocessor, the memory, and the transmission circuit are formed on one side (SIDE1) of the substrate while the power generation unit is formed on the other side (SIDE2) of the substrate.
Claims20
A semiconductor device, comprising:
- a sensor for detecting a physical amount of an object to be measured;
- an A/D conversion circuit for amplifying a signal detected by said sensor and to be converted to a digital signal;
- a microprocessor for processing said digital signal;
- a memory for storing information obtained by said sensor;
- a transmission circuit for transmitting said signal processed by said microprocessor to external;
- and
- a power generator for generating an electric power to be supplied to said sensor, said A/D conversion circuit, said microprocessor, said memory, and said transmission circuit respectively.
A semiconductor device, comprising:
- a sensor chip that includes a temperature sensor, an acceleration sensor, and a red/infrared ray sensor;
- an A/D conversion circuit for amplifying a signal received from said sensor chip to convert said signal to a digital value;
- a microprocessor for taking out information from said sensor chip to process said information;
- a memory for storing a program code of said microprocessor and said information received from said sensor chip;
- a transmission circuit controlled by said microprocessor and used to transmit data to external;
- a power supply control circuit for controlling whether to supply an electric power to said sensor unit, said A/D conversion circuit, said microprocessor, said memory, and said transmission circuit respectively;
- and
- a power collection circuit for collecting an increase of electrostatic energy of a variable capacitor generated by mechanical vibration to convert said increase to electric energy,
- wherein said sensor chip, said A/D conversion circuit, said microprocessor, said memory, said transmission/receiving circuit, and said power supply control circuit are formed on one side of a semiconductor substrate.
A semiconductor device, comprising:
- a microprocessor;
- a memory for storing information;
- and
- a transmission/reception circuit for transmitting/receiving data to/from said microprocessor and external,
- wherein said microprocessor, said memory, and said communication circuit are formed on one side of a semiconductor substrate;
- wherein said semiconductor device further includes a power generator for generating an electric power to be supplied to said microprocessor, said memory, and said communication circuit;
- and
- wherein said semiconductor device further includes functions for receiving first data from a first external device to process and convert said received first data to second data, then transmit said second data to a second external device that is different from said first external device.
Dependencies are inferred from the claim text.