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US 2004/0000699 A1Published application
Diode with improved switching speed
AssigneeM/A-COM Technology Solutions Holdings, Inc.
InventorJames Joseph Brogle
Life of this patent
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Abstract
A diode having a first semiconductor region of a first polarity and a second semiconductor region of an opposite polarity at least partially surrounding the first semiconductor region. A metal contact coupled to the second semiconductor region at least partially surrounding the first semiconductor region. The diode offers improvements in switching speed.
Claims17
A diode comprising:
- a first region of a first polarity type;
- a second region of a second polarity type at least partially surrounding said first region;
- and
- a first metal contact coupled to said second region, said first metal contact at least partially surrounding said first region.
1 more element
A planar diode comprising:
- a positively doped region;
- a first metal contact coupled to said positively doped region;
- a negatively doped region at least partially surrounding said positively doped region and said first metal contact;
- and
- a second metal contact coupled to said negatively doped region, said second metal contact at least partially surrounding said positively doped region and said first metal contact.
2 more elements
A planar PIN diode comprising:
- a positively doped region;
- a first metal contact coupled to said positively doped region;
- a negatively doped region at least partially surrounding said positively doped region and said first metal contact;
- a second metal contact coupled to said negatively doped region, said second metal contact at least partially surrounding said positively doped region and said first metal contact;
- and
- an intrinsic layer separating said positively and negatively doped regions.
3 more elements
Dependencies are inferred from the claim text.