Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKouji Matsuo
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Abstract
A semiconductor device is disclosed, which comprises a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode layer formed on the gate insulating film, source and drain regions formed at both sides of the gate electrode layer, and a channel region between the source and drain regions, wherein the gate electrode layer comprises a polycrystalline silicon layer and a metal layer formed between the gate insulating film and the polycrystalline silicon layer, and the metal layer has an electron density of 1.0×1021 atoms/cm3 or more.
Claims19
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the semiconductor substrate;
- a gate electrode layer formed on the gate insulating film;
- source and drain regions formed at both sides of the gate electrode layer;
- and
- a channel region between the source and drain regions, wherein
- the gate electrode layer comprises a polycrystalline silicon layer and a metal layer formed between the gate insulating film and the polycrystalline silicon layer, and
- the metal layer has an electron density of 1.0×1021 atoms/cm3 or more.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a polycrystalline silicon film on the gate insulating film;
- introducing a metal material into a predetermined region of the polycrystalline silicon film at an amount of the solid soluble limit or more;
- etching the polycrystalline silicon film to form, on the gate insulating film, a polycrystalline silicon gate layer to which the metal material is introduced, the polycrystalline silicon gate layer forming part of a gate electrode layer;
- forming source and drain regions at both sides of the polycrystalline silicon gate layer;
- and
- performing heat treatment to separate the metal material from the polycrystalline silicon gate layer to form a metal material segregation layer by the segregated metal material between the gate insulating film and the polycrystalline silicon gate layer.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a polycrystalline silicon film on the gate insulating film;
- introducing a first metal material into a first region of the polycrystalline silicon film at an amount of the solid soluble limit or more;
- introducing a second metal material into a second region of the polycrystalline silicon film at an amount of the solid soluble limit or more;
- etching the polycrystalline silicon film to form, on the gate insulating film, a first polycrystalline silicon gate layer to which the first metal material is introduced and a second polycrystalline silicon gate layer to which the second metal material is introduced, the first polycrystalline silicon gate layer forming part of a first gate electrode layer and the second polycrystalline silicon gate layer forming part of a second gate electrode layer;
- forming source and drain regions at both sides of each of the first and second polycrystalline silicon gate layers;
- and
- performing heat treatment to separate the first metal material from the first polycrystalline silicon gate layer to form a first segregation layer by the segregated first metal material between the gate insulating film and the first polycrystalline silicon gate layer and separate the second metal material from the second polycrystalline silicon gate layer to form a second segregation layer by the segregated second metal material between the gate insulating film and the second polycrystalline silicon gate layer.
Dependencies are inferred from the claim text.