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US 2004/0000694 A1Published application
Bipolar transistor with high breakdown voltage collector
AssigneeTexas Instruments Incorporated
InventorFrank S. Johnson
Life of this patent
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Abstract
A transistor that includes a doped buried region 320 within a semiconductor body 300, 340. The doped buried region includes a portion having a first thickness 348 and a second thickness, the first thickness being less than the second thickness. In one embodiment the first thickness is about half the second thickness. The transistor also includes a collector region 342 over the buried region, a base region 396 within the collector region, and an emitter region 422 within the base region.
Claims7
A transistor, comprising:
- a doped buried region within a semiconductor body, said doped buried region including a portion having a first thickness and a second thickness, said first thickness less than said second thickness;
- a collector region over said buried region;
- a base region within said collector region;
- and
- an emitter region within said base region.
2 more elements
An integrated circuit, comprising:
- a first transistor including:
- a first doped buried region within a semiconductor body, said first doped buried region including a portion having a first thickness and a second thickness, said first thickness less than said second thickness;
- a first collector region over said buried region;
- a first base region within said collector region;
- and
- a first emitter region within said base region;
- and
- a second transistor including:
- a second doped buried region with said semiconductor body, said second doped buried region being substantially uniform in thickness;
- a second collector region over said buried region;
- a second base region within said collector region;
- and
- a second emitter region within said base region.
10 more elements
A method for making a transistor, comprising the steps of:
- masking the surface of a semiconductor body to cover an intrinsic region;
- doping unmasked regions of said surface to form a plurality of diffusion source regions;
- diffusing dopants from said diffusion source regions to form a doped buried region having a first thickness and a second thickness, said first thickness less than said second thickness in said intrinsic region;
- forming a collector region over said doped buried region;
- forming a base region within said collector region;
- and
- forming an emitter region within said base region.
4 more elements
Dependencies are inferred from the claim text.