Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus and related structures
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-Ae Chung, Myoung-Bum Lee, Young-Pil Kim, Jin-Gyun Kim, Bean-Jun Jin
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Abstract
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Claims54
A method of forming a semiconductor device, the method comprising:
- forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region;
- and
- forming a polysilicon contact plug in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P).
A semiconductor device comprising:
- a semiconductor substrate including a conductive region on a surface thereof;
- an insulating layer on the semiconductor substrate, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region;
- and
- a polysilicon contact plug in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P).
A method of forming a semiconductor device, comprising:
- forming an interlayer insulating film on an entire surface of a semiconductor substrate having an N-type impurity diffusion layer, the interlayer insulating film having a contact hole therein exposing a portion of the N-type impurity diffusion layer;
- and
- forming a doped polysilicon layer on an entire surface of the semiconductor substrate to fill up the contact hole,
- wherein the doped polysilicon includes at least one polysilicon layer doped with an element whose diffusion coefficient is less than that of phosphorus (P) among elements selected from Group V of a periodic table by Mendeleef.
A method of forming a semiconductor device, comprising:
- forming an N-type impurity diffusion layer at a P-type semiconductor substrate;
- forming an interlayer insulating film on an entire surface of a semiconductor substrate including the N-type impurity diffusion layer;
- patterning the interlayer insulating film to form a contact hole exposing a predetermined area of the N-type impurity diffusion layer;
- and
- forming an arsenic (As) doped polysilicon layer to fill the contact hole.
A method of forming a semiconductor device, comprising:
- forming an N-type impurity diffusion layer at a P-type semiconductor substrate;
- forming an interlayer insulating film on an entire surface of a semiconductor substrate including the N-type impurity diffusion layer;
- patterning the interlayer insulating film to form a contact hole exposing a predetermined area of the N-type impurity diffusion layer;
- conformally forming an arsenic (As) doped polysilicon layer on an entire surface of the semiconductor substrate to conformally fill the contact hole;
- and
- forming a phosphorus (P) doped polysilicon layer on the arsenic (As) doped polysilicon layer to fill up the contact hole.
Dependencies are inferred from the claim text.