Semiconductor device

A semiconductor device comprising:

• a semiconductor chip in which a semiconductor amplifying element is formed, electrodes for inputting and electrodes for outputting electrically connected to said semiconductor amplifying element are provided on its surface;
• and
• a plurality of wiring lines for connecting in parallel said input electrodes and an input terminal outside said semiconductor chip or said output electrodes and an output terminal outside said semiconductor chip,
• wherein wiring intervals are shorter in the central area than in the end areas, of a wiring array comprising said plurality of wiring lines.

A semiconductor device comprising:

• a semiconductor substrate;
• and
• a plurality of semiconductor amplifying elements formed over said semiconductor substrate, each having an input electrode, an output electrode and a ground electrode, each input electrode and each output electrode being electrically connected,
• wherein the ground electrodes of semiconductor amplifying elements in the central area out of said plurality of semiconductor amplifying elements are shorter than the ground electrodes of semiconductor amplifying elements in the end areas out of said plurality of semiconductor amplifying elements.

A semiconductor device comprising:

• a semiconductor substrate;
• and
• a plurality of semiconductor amplifying elements formed over said semiconductor substrate, each comprising a field effect transistor having a gate electrode, a source electrode and a drain electrode, each gate electrode and each drain electrode being electrically connected,
• wherein lengths of the source electrodes of semiconductor amplifying elements in the central area out of said plurality of semiconductor amplifying elements are shorter than those of the source electrodes of semiconductor amplifying elements in the end areas out of said plurality of semiconductor amplifying elements.

A semiconductor device comprising:

• a semiconductor substrate;
• and
• a plurality of semiconductor amplifying elements formed over said semiconductor substrate, each having an input electrode, an output electrode and a ground electrode, each input electrode and each output electrode being electrically connected,
• wherein the widths of the ground electrodes of semiconductor amplifying elements, or the width of the doped layer formed over said semiconductor substrate connected to the ground electrodes, in the central area out of said plurality of semiconductor amplifying elements are greater than the ground electrodes of semiconductor amplifying elements, or the width of the doped layer formed over said semiconductor substrate connected to the ground electrodes, in the end areas out of said plurality of semiconductor amplifying elements.