Method for manufacturing avalanche photodiodes, avalanche photodiode, optical receiver module and optical receiving apparatus
AssigneeOpnext Japan, Inc.
InventorsHiroyuki Kamiyama, Takashi Toyonaka
Life of this patent
Estimating the term…
Abstract
With respect to an avalanche photodiode (APD) having a semi-insulating re-grown guard-ring layer, its photocurrent-vs.-reverse-bias-voltage characteristic at several temperature-points is measured. Moreover, based on the measured result, the optical responsivity is determined from a flat portion that will appear in the photocurrent-vs.-reverse-bias-voltage characteristic at a temperature that is higher than the several temperature-points.
Claims6
A method of manufacturing an avalanche photodiode, said method comprising the steps of:
- obtaining a first photocurrent-vs.-voltage characteristic at a first temperature;
- obtaining a second photocurrent-vs.-voltage characteristic at a second temperature;
- obtaining a third photocurrent-vs.-voltage characteristic at a temperature higher than said first temperature and said second temperature by using said first photocurrent-vs.-voltage characteristic and said second photocurrent-vs.-voltage characteristic;
- and
- obtaining, from said third photocurrent-vs.-voltage characteristic, the optical responsivity in a multiplication factor that becomes a criterion.
An avalanche photodiode in which there appears no flat portion in its photocurrent-vs.-voltage characteristic at the room temperature, said avalanche photodiode comprising:
- a semi-insulating re-grown layer, wherein the optical responsivity in a multiplication factor that becomes a criterion is obtained from a photocurrent-vs.-voltage characteristic at a temperature exceeding 100° C.
An optical receiver module, comprising:
- an avalanche photodiode in which there appears no flat portion in its photocurrent-vs.-voltage characteristic at the room temperature;
- a pre-amplifier for amplifying an electrical signal resulting from photoelectric conversion performed by said avalanche photodiode;
- and
- a housing for locating therein said avalanche photodiode and said pre-amplifier,
- wherein the optical responsivity of said avalanche photodiode in a multiplication factor that becomes the criterion is obtained based on said photocurrent-vs.-voltage characteristic at a temperature exceeding 100° C.
An optical receiving apparatus including an optical receiver module and an auto-gain-control amplifier,
- wherein said optical receiver module includes an avalanche photodiode and a housing for containing said avalanche photodiode,
- the optical responsivity of said avalanche photodiode in a multiplication factor that becomes a criterion being obtained based on its photocurrent-vs.-voltage characteristic at a temperature exceeding 100° C.
Dependencies are inferred from the claim text.