High-power light-emitting diode structures

A method for producing a semiconductor device comprising:

• providing a substrate having a first and second major surface;
• providing a semiconductor device structure over the first major surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer;
• providing an electrode in electrical contact with the n-type semiconductor layer;
• providing a light-transmissive electrode layer substantially covering the p-type semiconductor layer;
• providing a bonding pad in electrical contact with the light-transmissive electrode layer;
• providing an insulating region having a first and second major surface, the first major surface contacting the bonding pad and the second major surface contacting the p-type semiconductor layer;
• and
• providing a reflector layer contacting the second major surface of the substrate.

A semiconductor device comprising:

• a substrate having a first and second major surface;
• a semiconductor device structure over the first major surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer;
• a first electrode in electrical contact with the n-type semiconductor layer;
• a light-transmisive electrode layer substantially covering the p-type semiconductor layer to define an exposed region of the p-type semiconductor layer;
• a substantially non-transmissive light-absorbing bonding pad disposed partially over the light-transmissive electrode layer, and partially over the exposed region of the p-type semiconductor layer, the bonding pad forming an ohmic contact with the light-transmissive electrode layer, and forming substantially no ohmic contact with the p-type semiconductor layer;
• and
• a reflector layer contacting the second major surface of the substrate.

A method for producing a semiconductor device comprising:

• providing a substrate having a first and second major surface;
• providing a semiconductor device structure over the first major surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer;
• providing a first electrode in electrical contact with the n-type semiconductor layer;
• providing a light-transmisive electrode layer substantially covering the p-type semiconductor layer to define an exposed region of the p-type semiconductor layer;
• providing a substantially non-transmissive light-absorbing bonding pad disposed partially over the light-transmissive electrode layer, and partially over the exposed region of the p-type semiconductor layer, the bonding pad forming an ohmic contact with the light-transmissive electrode layer, and forming substantially no ohmic contact with the p-type semiconductor layer;
• and
• providing a reflector layer contacting the second major surface of the substrate.