Electron beam exposure apparatus, electron beam method, semiconductor device manufacturing method, mask, and mask manufacturing method
AssigneeAdvantest Corporation
InventorsHiroshi Yasuda, Akio Yamada, Takayuki Yabe
Life of this patent
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Abstract
An electron beam exposure apparatus for exposing a pattern accurately even if the current of the electron beam is high. The electron beam exposure apparatus 100 includes a mask 30 with a first and second block patterns for shaping the electron beam. Magnification of the first block pattern to a first exposure pattern which is to be exposed by the electron beam having a first current shaped by the first block pattern is different with magnification of the second block pattern to a second exposure pattern which is to be exposed by the electron beam having a second current shaped by the second block pattern.
Claims17
An electron beam exposure apparatus for exposing a wafer using the electron beam, comprising
- a mask with a first and second block patterns for shaping the electron beam, wherein
- magnification of said first block pattern to a first exposure pattern which is to be exposed by the electron beam having a first current shaped by said first block pattern is different with magnification of said second block pattern to a second exposure pattern which is to be exposed by the electron beam having a second current shaped by said second block pattern.
An electron beam exposure apparatus for exposing a wafer using an electron beam, wherein a beam area of the electron beam is corrected according to current of the electron beam to be irradiated on the wafer.
A mask for shaping an electron beam for exposing a wafer, comprising:
- a first block pattern for shaping the electron beam for exposing a first exposure pattern;
- and
- a second block pattern for shaping the electron beam for exposing a second exposure pattern of which an exposure area is different from that of said first exposure pattern;
- wherein
- magnification of said first block pattern to the first exposure pattern is different from magnification of said second block pattern to the second exposure pattern.
A mask manufacturing method of manufacturing a mask with an opening for shaping an electron beam for exposing a desired pattern on a wafer, comprising steps of:
- calculating size of the opening based on required beam current for exposing the pattern;
- and
- shaping the opening in a substrate according to the size calculated in said opening size calculating step.
An electron beam exposure method for exposing a pattern on a wafer using an electron beam, comprising steps of:
- correcting an area of the electron beam according to current of the electron beam irradiated on the wafer;
- and
- exposing the wafer using the electron beam, of which the beam area is corrected.
A semiconductor device manufacturing method for exposing a pattern on a wafer using the electron beam, and manufacturing a semiconductor device, comprising steps of:
- correcting an area of the electron beam according to current of the electron beam irradiated on the wafer;
- and
- exposing the wafer using the electron beam, of which the beam area is corrected.
Dependencies are inferred from the claim text.