Fluxless bumping process using ions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hui Lee, Chia-Fu Lin, Chao-Yuan Su, Yeng-Ming Chen, Kai-Ming Ching, Li-Chih Chen, Hao-Chih Tien
Life of this patent
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Abstract
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
Claims35
A process comprising:
- providing a substrate having an electrically conductive structure thereon, the electrically conductive structure including an outer surface including a compound including an oxide group;
- reacting the oxide group with an ion thereby reducing the melting temperature of the outer surface;
- heating the electrically conductive structure and cooling the same to form an electrically conductive bump on the substrate.
A process comprising:
- providing a substrate having a solder structure thereon, the solder structure including an outer surface including tin oxide;
- converting the tin oxide to tin oxy-halide thereby reducing the melting temperature of the outer surface;
- heating the solder structure including tin oxy-halide and cooling the same to form an solder bump on the substrate;
- and wherein the converting and heating are conducted simultaneously.
A process comprising:
- providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad;
- forming a fluxless solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide;
- reacting the tin oxide with an ion to reduce the melting temperature of the outer layer;
- heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
A process comprising:
- providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad;
- forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide;
- producing a plasma including at least one of halide and hydrogen ions, and exposing the solder structure to the plasma;
- heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
A process comprising:
- providing a semiconductor device including a solder structure thereon, the solder structure including an outer surface including tin oxide;
- exposing the outer surface to a plasma including F ions;
- reflowing the solder structure to form a solder bump on the semiconductor device and wherein the exposing and reflowing are conducted simultaneously.
A process comprising:
- providing a substrate having an electrically conductive structure thereon, and wherein the electrically conductive structure includes an outer surface including oxides;
- heating the electrically conductive;
- reacting hydrogen with the oxides to produce water;
- heating the electrically conductive structure to reflow the same, and cooling the structure to form an electrically conductive bump on the substrate.
Dependencies are inferred from the claim text.