CU ECP planarization by insertion of polymer treatment step between gap fill and bulk fill steps
AssigneeApplied Materials, Inc.
InventorMichael X. Yang
Life of this patent
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Abstract
The method generally includes filling features in a substrate by plating metal ions from a gap fill solution onto the substrate, reducing plating activity in the features in a polymer treatment step by conditioning the substrate surface with a conditioning solution, and plating the substrate surface to a desired thickness by plating metal ions from a bulk fill solution onto the substrate surface. The method may also include treating the substrate with a conditioning solution comprising suppressors after a seed layer deposition to substantially eliminate conformal deposition in features of the substrate and plating metal ions from a plating solution onto the substrate.
Claims27
A method for plating metal onto a substrate, comprising:
- substantially filling features in the substrate by plating metal ions from a gap fill solution onto the substrate;
- and
- reducing plating activity in the features prior to completely filling the features and plating a surface of the substrate by conditioning the substrate surface with a conditioning solution.
A method for plating metal onto a substrate, comprising:
- disposing a substrate in a gap fill solution to substantially fill features in the substrate by plating metal ions onto the substrate;
- rinsing the substrate with a conditioning solution to substantially terminate plating activity in the features;
- transferring the substrate from the gap fill solution to a bulk fill solution;
- and then
- plating metal ions from the bulk fill solution onto the substrate.
A method for plating metal onto a substrate, comprising:
- disposing a substrate in a gap fill cell containing a gap fill solution to substantially fill features in the substrate by plating metal ions from the gap fill solution onto the substrate;
- transferring the substrate from the gap fill cell to a conditioning cell containing a conditioning solution to substantially terminate plating activity in the features;
- and
- transferring the substrate from the conditioning cell to a bulk fill cell containing a bulk
- fill solution to plate a surface of the substrate to a desired thickness by plating metal ions from the bulk fill solution onto the substrate surface.
A method for plating metal onto a substrate, comprising:
- disposing a substrate in a plating cell containing a gap fill solution to substantially fill features in the substrate by plating metal ions from the gap fill solution onto the substrate;
- draining the gap fill solution from the plating cell upon completion of substantially filling the features;
- rinsing the substrate with a conditioning solution;
- filling the plating cell with a bulk fill solution;
- and
- plating the surface for the substrate to a desired thickness by plating metal ions from the bulk fill solution onto the substrate.
A method for plating metal onto a substrate, comprising:
- disposing a substrate in a plating cell containing a plating solution;
- applying an electrical current to the plating cell to substantially fill features in the substrate by plating metal ions from the plating solution onto the substrate;
- terminating an electrical current supplied to the plating cell for a time sufficient to allow diffusion of the plating solution to a point of equilibrium;
- and then providing the electrical current to the plating cell to plate the substrate to a desired thickness.
A method for plating metal onto a substrate, comprising:
- treating the substrate with a conditioning solution comprising suppressors after a seed layer deposition to substantially eliminate conformal deposition in features of the substrate;
- and
- plating metal ions from a plating solution onto the substrate.
Dependencies are inferred from the claim text.