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US 2004/0000322 A1Published application
Point-of-use mixing with H2SO4 and H2O2 on top of a horizontally spinning wafer
AssigneeApplied Materials, Inc.
InventorSteven Verhaverbeke
Life of this patent
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Abstract
A method of stripping photoresist from a single wafer that includes flowing H2SO4 toward a top surface of the wafer and flowing H2O2 toward the top surface of the wafer where the H2SO4 reaches a first location and the H2O2 reaches a second location.
Claims31
A method of stripping photoresist from a single wafer, comprising:
- flowing H2SO4 toward a top surface of the wafer;
- and
- flowing H2O2 toward the top surface of the wafer;
- wherein the H2SO4 reaches a first location and the H2O2 reaches a second location.
1 more element
A single wafer cleaning chamber, comprising:
- a rotatable wafer holding bracket;
- a source of H2O2 connected to a first nozzle;
- and
- a source of H2SO4 connected to a second nozzle, wherein the first nozzle and the second nozzle are capable of directing a liquid flow onto a wafer positioned in the rotatable wafer holding bracket.
1 more element
The single wafer cleaning chamber of clam 27, wherein the angled nozzles are capable of impinging a flow from the first nozzle with a flow from the second nozzle on the wafer top surface.
Dependencies are inferred from the claim text.