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US 2003/0229880 A1Published application
Test masks for lithographic and etch processes
AssigneePraesagus, Inc.
InventorsDavid White, Taber H. Smith
Life of this patent
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Abstract
A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.
Claims13
A method comprising
- generating a mask design for patterning a test wafer using a lithographic or etch process,
- characterizing the process based on the patterned test wafer, and
- using a pattern-dependent model based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.,
Dependencies are inferred from the claim text.