Method for improving adhesion between dielectric material layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Huei Chen, Lain-Jong Li
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Abstract
This invention provides a method to improve the adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device. The first step is to form a SiC-based dielectric material layer over a substrate. The SiC-based dielectric material layer is treated by oxygen plasma. A second layer of dielectric material is formed over the SiC-based dielectric material layer.
Claims20
A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
- forming a first layer of dielectric material having a formula of SiCxNy wherein x≧0, y≧0 and x+y≠0;
- supplying oxygen ion to said first layer of dielectric material;
- and
- forming a second layer of dielectric material over said first layer of dielectric material.
A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
- forming a first layer of SiC-based dielectric material;
- treating said first layer of SiC-based dielectric material by oxygen plasma;
- and
- forming a second layer of silicon-based dielectric material over said first layer.
A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
- forming a first layer of SiC-based dielectric material;
- treating said first layer by oxygen plasma;
- forming a second layer of silicon-based dielectric material over said first layer;
- and
- forming SILK layer over said second layer.
Dependencies are inferred from the claim text.