Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device having, on a semiconductor substrate, a gate which comprises a gate oxide film and a SiGe film containing Si and Ge;

• which comprising the steps of:
• a patterning to form a gate electrode pattern as well as an oxide film pattern by applying dry etching to a layered film which is formed, on the semiconductor substrate, of an oxide film and the SiGe film, being laid in this order;
• a first cleaning wherein, after the step of the patterning, the semiconductor substrate is cleaned with a first cleaning solution containing hydrofluoric acid;
• and
• a second cleaning wherein, after the step of the first cleaning, the semiconductor substrate is cleaned with a second cleaning solution containing ammonia and hydrogen peroxide.