Method to perform deep implants without scattering to adjacent areas
AssigneesInternational Business Machines Corporation, Infineon Technologies North America Corp.
InventorsThomas Schafbauer, Sandrine E. Sportouch
Life of this patent
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Abstract
A method of fabricating an integrated circuit in and on a semiconductor substrate with deep implantations by applying a scattered ion capturing layer in the resist mask opening to capture any implanted ions scattered in the resist and deflected out of the resist into the mask opening to prevent these ions from reaching the semiconductor substrate and affecting the concentration of ions at the edge of the mask and thus the performance of the integrated circuit.
Claims20
A method of fabricating an integrated circuit requiring a deep ion implantion in a semiconductor substrate comprising the steps of:
- providing a semiconductor substrate having an upper surface through which impurity ions are to be implanted;
- applying a thin, easily removed, scattered impurity ion capturing layer on said surface of the semiconductor substrate;
- applying a mask material adjacent said ion capturing layer to provide a mask with openings for passing implanted ions into the substrate;
- implanting impurity ions of sufficient energy and dosage to implant the ions deep in the semiconductor substrate;
- and
- capturing by the ion capturing layer those ions directed into the resist material but scattered in the material and deflected at the edge of the mask opening into the opening.
In a method of fabricating an integrated circuit with shallow trench isolation requiring a plurality of deep ion implantion in a semiconductor substrate for various structures of the integrated circuit comprising the steps of:
- providing a semiconductor substrate having an upper surface through which impurity ions are to be implanted;
- applying a thin, scattered impurity ion capturing layer on said surface of the semiconductor substrate;
- applying a mask material adjacent said ion capturing layer to provide a mask with openings for passing implanted ions into the substrate;
- implanting impurity ions of sufficient energy and dosage to implant the ions deep in the semiconductor substrate;
- capturing by the ion capturing layer those ions directed into the resist material but scattered in the material and deflected at the edge of the mask opening into the opening;
- removing the mask material after implantation and applying another mask material with openings for the next implantation of another structure;
- and
- removing the ion capturing layer after all of the deep implantation for the various structures have been made.
Dependencies are inferred from the claim text.