Method of fabricating semiconductor device, and developing apparatus using the method

A method of fabricating a semiconductor device comprising:

• forming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over an object to be processed;
• irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer;
• baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer;
• and
• performing dry etching processing using the resist pattern as a mask.

A method of fabricating a semiconductor device comprising:

• forming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over an object to be processed;
• irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer;
• baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer;
• performing dry etching processing using the resist pattern as a mask;
• and
• removing the resist pattern.

A method of fabricating a semiconductor device comprising:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film over the semiconductor film;
• forming a first-layer gate electrode film over the gate insulating film;
• forming a second-layer gate electrode film over the first-layer gate electrode film;
• forming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over the second-layer gate electrode film;
• irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer;
• baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer;
• performing a first dry etching processing for etching the second-layer gate electrode film to form a second-layer gate electrode;
• performing a second dry etching processing for etching the first-layer gate electrode film to form a first-layer gate electrode;
• performing a third dry etching processing for etching the first-layer gate electrode and the second-layer gate electrode;
• and
• removing the resist pattern,
• wherein the first-layer gate electrode have a first shape tapered portion and the second-layer gate electrode have a second shape tapered portion after the third dry etching processing, and
• wherein the first-layer gate electrode extends beyond the second-layer gate electrode after the third dry etching processing.

A developing apparatus comprising:

• a developing unit for developing a resist containing a photosensitizer;
• a light irradiation unit for irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer;
• and
• a bake unit for baking at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer.