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US 2003/0228718 A1Published application
Field effect transistor
AssigneeXerox Corporation
InventorsDasarao K. Murti, Beng S. Ong, James M. Duff
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Abstract
A field effect transistor composed of: an insulating layer; a gate electrode; a semiconductor layer including an organic semiconductor material and a binder resin; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
Claims14
A field effect transistor comprising:
- an insulating layer;
- a gate electrode;
- a semiconductor layer including an organic semiconductor material and a binder resin;
- a source electrode;
- and
- a drain electrode,
- wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.