Photoresist compositions
AssigneeShipley Company, L.L.C.
InventorsGary N. Taylor, Gary Ganghui Teng
Life of this patent
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Abstract
New photoresists are provided that are suitable for short wavelength imaging, including sub-300 nm and sub-200 nm such as 193 nm and 157 nm. Resists of the invention comprise a polymer component that contains one or more adhesion-promoting groups that can impart enhanced adhesion of a coating layer of a photoresist containing the polymer to an underlying substrate, including a SiON layer.
Claims51
A microelectronic device substrate comprising
- a silicon oxynitride layer,
- a photoresist composition coating layer over the silicon oxynitride layer,
- wherein the photoresist composition comprises a polymer and one or more photoacid generator compounds, the polymer comprising one or more adhesion-promoting groups.
A microelectronic device substrate comprising
- a photoresist composition coating layer over the substrate surface,
- wherein the photoresist composition comprises a copolymer and one or more photoacid generator compounds, the copolymer comprising fluorinated repeat units, photoacid labile repeat units, and repeat units that contain an adhesion-promoting moiety.
A method for forming a photoresist relief image comprising:
- applying a coating layer of a photoresist composition on a substrate, the photoresist composition comprises a copolymer and one or more photoacid generator compounds, the copolymer comprising fluorinated repeat units, photoacid labile repeat units, and repeat units that contain an adhesion-promoting moiety;
- exposing the applied photoresist layer to activating patterned radiation and developing the exposed photoresist layer to provide a photoresist relief image.
A photoresist composition comprising one or more photoacid generator compounds and a copolymer comprising fluorinated repeat units, photoacid labile repeat units, and repeat units that contain an adhesion-promoting moiety.
Dependencies are inferred from the claim text.