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AssigneeSony Corporation
InventorsYutaka Higo, Kazuhiro Bessho, Tetsuya Mizuguchi, Tetsuya Yamamoto, Masanori Hosomi, Kazuhiro Ohba, Hiroshi Kano
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When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.
A tunnel magnetoresistive effect element having a multilayer film structure including two ferromagnetic material layers and a tunnel barrier layer sandwiched between said two ferromagnetic material layers, wherein said barrier layer is formed by oxidizing a metal layer and said conductive layer is formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof.
A manufacturing method for manufacturing a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers and a barrier layer sandwiched between said two ferromagnetic material layers, comprising the steps of:
A magnetic memory device including a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers and a barrier layer sandwiched between said two ferromagnetic material layers and which is able to record information by the use of change of magnetization direction of said ferromagnetic material layer, wherein said barrier layer is formed by oxidizing a conductive layer and said conductive layer is formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof.
Dependencies are inferred from the claim text.