Synthetic free layer for CPP GMR

A synthetically pinned CPP SV magnetic read head comprising:

• a layer of antiferromagnetic material on a seed layer;
• on said layer of antiferromagnetic material, a first layer of ferromagnetic material, said first layer being magnetized in a first direction;
• a layer of ruthenium on said first layer;
• on said layer of ruthenium, a second layer of ferromagnetic material, said second layer being magnetized in a second direction that is anti-parallel to said first direction;
• on said second layer, a copper spacer layer;
• on said copper spacer layer, a layer of low coercivity ferromagnetic material;
• on said layer of low coercivity ferromagnetic material, a layer of chromium;
• on said layer of chromium, a layer of low coercivity inverse GMR material;
• and
• on said layer of low coercivity inverse GMR material, a cap layer.

A synthetically pinned CPP SV magnetic read head comprising:

• a layer of antiferromagnetic material on a seed layer;
• on said layer of antiferromagnetic material, a first layer of inverse GMR material, said first layer being magnetized in a first direction;
• a first layer of chromium on said first layer of inverse GMR material;
• on said first layer of chromium, a second layer ferromagnetic material, said second layer being magnetized in a second direction that is anti-parallel to said first direction;
• on said second layer, a copper spacer layer;
• on said copper spacer layer, a third layer of low coercivity ferromagnetic material;
• on said third layer of low coercivity ferromagnetic material, a second layer of chromium;
• on said second layer of chromium, a fourth layer, of low coercivity inverse GMR material;
• and
• on said fourth layer, a cap layer.

A process to manufacture a synthetically pinned CPP SV magnetic read head, comprising:

• providing a substrate and depositing thereon a seed and then depositing a layer of antiferromagnetic material on said seed layer;
• on said layer of antiferromagnetic material, depositing a first layer of an inverse GMR material;
• depositing a first layer of chromium on said first layer;
• on said first layer of chromium, depositing a second layer, of cobalt-iron;
• then depositing a copper spacer layer on said second layer;
• on said copper spacer layer, depositing a third layer, of low coercivity ferromagnetic material;
• on said third layer, depositing a second layer of chromium;
• on said second layer of chromium, depositing a fourth layer, of low coercivity inverse GMR material;
• and
• then depositing a cap layer on said fourth layer.