US 2003/0227291 A1Published application

Capacitance measurement method

AssigneeMitsubishi Denki Kabushiki Kaisha

InventorsTakeshi Okagaki, Motoaki Tanizawa, Tatsuya Kunikiyo

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Abstract

A capacitance measurement method is provided which is capable of measuring an accurate capacitance value even if a leakage current on a level that cannot be ignored occurs in a capacitance to be measured. In step S1, a test current ICnorm is measured by using a normal PMOS gate potential as a PMOS gate potential for providing on/off control of PMOS transistors in a predetermined cycle. In step S2, a current ICrat is measured by using, as the PMOS gate potential, a multiplied on-time PMOS gate potential, the “L” period and fall time of which are integral multiples of those of the normal PMOS gate potential. In step S3, based on the currents ICnorm, ICrat, a leakage current IRt is eliminated and the amount of capacity current CIC consisting only of a capacitance current component ICt is calculated. In step S5, a target capacitance is obtained based on the capacity current CIC and a charge frequency frat obtained in step S4.

Claims3

Dependent claims

A capacitance measurement method for measuring a capacitance to be measured which is connected to a CBCM (Charge Based Capacitance Measurement) circuit including a charge transistor,

said capacitance measurement method comprising the steps of:
(a) applying to said charge transistor a first control signal for controlling turning on/off of said charge transistor in a predetermined cycle, thereby to measure an amount of first test current to be supplied through said charge transistor to said capacitance to be measured;
(b) applying to said charge transistor a second control signal for controlling turning on/off of said charge transistor in said predetermined cycle, thereby to measure an amount of second test current to be supplied through said charge transistor to said capacitance to be measured, a period during which said second control signal indicates an on state of said charge transistor being set to be predetermined times longer than that during which said first control signal indicates an on state of said charge transistor;
(c) eliminating a leakage current occurring incident to said capacitance to be measured and calculating an amount of capacity current used only for charging said capacitance to be measured based on said first and second test currents;
(d) calculating a charge frequency suitable for said amount of capacity current;
and
(e) calculating a capacitance value of said capacitance to be measured based on said amount of capacity current and said charge frequency.

4 more elements

Dependencies are inferred from the claim text.