Photovoltaic device
AssigneeCanon Kabushiki Kaisha
InventorAtsushi Yasuno
Life of this patent
Estimating the term…
Abstract
The present invention provides a photovoltaic device including a plurality of unit devices stacked, each unit device consisting of a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a carbon atom concentration have maximum peaks in the vicinity of a p/n interface between the plurality of unit devices, thereby stabilizing the p/n interface and improving the interfacial characteristics and the film adhesion to attain a high photoelectric conversion efficiency of the photovoltaic device.
Claims6
A photovoltaic device comprising a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, wherein an oxygen atom concentration has a maximum peak in a vicinity of a p/n interface between the plurality of unit devices.
A photovoltaic device comprising a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, wherein a carbon atom concentration has a maximum peak in a vicinity of a p/n interface between the plurality of unit devices.
A photovoltaic device comprising a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, wherein an oxygen atom concentration and a carbon atom concentration have maximum peaks in a vicinity of a p/n interface between the plurality of unit devices.
Dependencies are inferred from the claim text.