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US 2003/0227014 A1Published application
Process for forming semiconductor layer of micro-and nano-electronic devices
AssigneeXerox Corporation
InventorsDasarao K. Murti, Beng S. Ong, James M. Duff
Life of this patent
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Abstract
A process comprising: creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.
Claims19
A process comprising:
- creating a dispersion including:
- (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material;
- and
- solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.
1 more element
A process for fabricating a field effect transistor comprising:
- forming an insulating layer, a gate electrode, a semiconductor layer, a source electrode, and a drain electrode,
- wherein the forming the semiconductor layer is accomplished by solution coating using a dispersion including (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material, to form the semiconductor layer including the organic semiconductor material and the resin binder,
- wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are formed in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
A field effect transistor comprising:
- an insulating layer;
- a gate electrode;
- a semiconductor layer including an organic semiconductor material and a resin binder;
- a source electrode;
- and
- a drain electrode,
- wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.