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US 2003/0226503 A1Published application
Shielding plate in plasma for uniformity improvement
AssigneeIntel Corporation
InventorsHan-Ming Wu, He Long
Life of this patent
Estimating the term…
Abstract
An apparatus comprising a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate; a shielding plate within the plasma chamber to actively direct ion flux to desired areas of the substrate; and a supporting structure to support the shielding plate within the chamber is disclosed.
Claims29
An apparatus comprising:
- a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate;
- a shielding plate within said plasma chamber to actively direct ion flux to desired areas of the substrate;
- and
- a supporting structure to support said shielding plate within said chamber.
1 more element
A method comprising:
- optimizing the dimensions, geometry, and location of a shielding plate to generate a desired ion flux in a plasma-assisted material process conducted in a plasma chamber;
- inserting the plate above a substrate in the chamber;
- and
- carrying out the desired material process upon the substrate by the ion flux generated.
1 more element
A method comprising:
- actively directing ion flux within a plasma chamber by the insertion of a plate into the chamber;
- and
- regulating ion flux to different areas of the substrate by altering properties of the plate.
A method comprising:
- placing a shielding plate within a plasma chamber to actively direct ion flux, such that the ratio of (neutrons)/(neutrons+ions) bombarding a substrate is regulated.
A method comprising:
- actively directing ion flux within a plasma chamber by the insertion of a shielding plate such that the accumulation of etching by-products across the surface of a substrate is regulated.
Dependencies are inferred from the claim text.