Semiconductor device producing method and semiconductor device producing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsUnryu Ogawa, Naoya Yamakado, Tadashi Terasaki, Shinji Yashima
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Abstract
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
Claims14
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in said processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around said processing chamber, comprising:
- forming an oxide film on said substrate, and
- thereafter, by changing a high frequency impedance of said substrate-supporting body, continuously forming an oxynitride film by nitriding said oxide film by activated species of nitrogen which are activated by plasma.
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in said processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around said processing chamber, comprising:
- forming an oxide film on said substrate, and
- thereafter, by changing an electric potential of said substrate-supporting body, continuously forming an oxynitride film by nitriding said oxide film by activated species of nitrogen which are activated by plasma.
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in said processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around said processing chamber, said plasma processing apparatus producing plasma in a plasma producing region in said processing chamber and subjecting said substrate to plasma processing, comprising:
- forming an oxide film on said substrate, and
- thereafter, by changing a difference between an electric potential of said substrate-supporting body and a space electric potential of said plasma producing region, continuously forming an oxynitride film by nitriding said oxide film by activated species of nitrogen which are activated by plasma.
A semiconductor device producing apparatus, comprising:
- a processing chamber,
- a substrate-supporting body which supports a substrate in said processing chamber, a cylindrical electrode and a magnetic lines of force-forming member disposed around said processing chamber, and a changing device which changes a high frequency impedance of said substrate-supporting body, wherein
- a first process for forming an oxide film on said substrate and a second process for forming an oxynitride film by subjecting said oxide film formed by said first process to nitriding processing by activated species of nitrogen activated by plasma are continuously carried out by changing the high frequency impedance of said substrate-supporting body by said changing device.
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in said processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around said processing chamber, comprising:
- for forming a nitride film on said substrate, and
- thereafter, by changing a high frequency impedance of said substrate-supporting body, continuously forming an oxynitride film by oxidizing said nitride film by activated species of oxygen which are activated by plasma.
Dependencies are inferred from the claim text.