Electron-beam treated CDO films
AssigneeIntel Corporation
InventorLawrence D. Wong
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Abstract
A method of forming an integrated circuit including forming a dielectric film is described. The forming of the dielectric film includes: providing a substrate, providing a carbon doped oxide film on the substrate, and treating the carbon doped oxide film with an electron beam. The carbon doped oxide film can be provided by chemical vapor deposition.
Claims28
A method of forming an integrated circuit, including
- forming a dielectric film comprising,
- providing a substrate,
- providing a CDO film on the substrate, and
- treating the CDO film with an electron beam.
An integrated circuit, including a dielectric film comprising a CDO film having a modulus of about 20 GPa or greater.
An integrated circuit, including a dielectric film comprising a CDO film having a hardness of about 2.8 GPa or greater.
An integrated circuit, including a dielectric film comprising a CDO film having a hardness of about 2.8 GPa or greater and a modulus of about 20 GPa or greater.
Dependencies are inferred from the claim text.