Semiconductor device and manufacturing method therefor

A manufacturing method for a semiconductor device, comprising:

• forming an amorphous semiconductor layer on a substrate;
• forming a metal-containing layer on the amorphous semiconductor layer, and obtaining a first crystalline semiconductor layer by heat treatment;
• patterning the first crystalline semiconductor layer into a desired shape to form first semiconductor islands and markers;
• irradiating laser light converged into an elliptical or a rectangular shape onto a region including the first semiconductor islands while performing scanning relatively to the substrate to obtain the first semiconductor islands constituted of second crystalline semiconductor layers;
• patterning the first semiconductor islands constituted of the second crystalline semiconductor layers into desired shapes to form second semiconductor islands;
• and
• forming thin-film transistors using the second semiconductor islands as active layers, and configuring a circuit by using the thin-film transistors,
• wherein the second semiconductor islands serving as active layers of all of thin-film transistors included in a unitary circuit included in the semiconductor device are formed of any one of the first semiconductor islands constituted of the second crystalline semiconductor layers.

A semiconductor device wherein:

• an amorphous semiconductor layer is formed on a substrate;
• the amorphous semiconductor layer is patterned into a desired shape to form first semiconductor islands and markers;
• laser light converged into an elliptical or a rectangular shape is irradiated to a region including the first semiconductor islands while performing scanning relatively to the substrate to crystallize the first semiconductor islands;
• the crystallized first semiconductor islands are patterned into desired shapes and second semiconductor islands are formed;
• thin-film transistors using the second semiconductor islands as active layers are formed to configure a circuit by using the thin-film transistors;
• and
• the second semiconductor islands serving as active layers of all of thin-film transistors included in a unitary circuit included in the semiconductor device are formed of any one of the crystallized first semiconductor islands.

A semiconductor device wherein:

• an amorphous semiconductor layer is formed on a substrate;
• a metal-containing layer is formed on the amorphous semiconductor layer to obtain a first crystalline semiconductor layer by heat treatment;
• the first crystalline semiconductor layer is patterned into a desired shape to form first semiconductor islands and markers;
• laser light converged into an elliptical or a rectangular shape is irradiated onto a region including the first semiconductor islands while performing scanning relatively to the substrate to obtain the first semiconductor islands constituted of second crystalline semiconductor layers;
• the first semiconductor islands constituted of the second crystalline semiconductor layers are patterned into desired shapes to form second semiconductor islands;
• thin-film transistors using the second semiconductor islands as active layers are formed to configure a circuit by using the thin-film transistors;
• and
• the second semiconductor islands serving as active layers of all of thin-film transistors included in a unitary circuit included in the semiconductor device are formed of any one of the first semiconductor islands constituted of the second crystalline semiconductor layers.