Method of forming group-III nitride semiconductor layer on a light-emitting device
AssigneeVetra Technology, Inc.
InventorsKazutaka Terashima, Mu-Jen Lai, Chiung-Yu Chang
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Abstract
A method of forming a group-III nitride semiconductor layer on a light-emitting device. First, a substrate is provided. Next, a buffer layer is formed on the substrate. A hydrogen treatment is performed on the buffer layer. Finally, a group-III nitride semiconductor layer is formed on the buffer layer. According to the present invention, a hydrogen treatment is performed on the buffer to prevent corrosion during subsequent process and remove particles from the buffer layer. Thus, the structure of the epitaxy layer following formed on the buffer layer is enhanced.
Claims20
A method of forming a group-III nitride semiconductor layer on a light-emitting device, comprising:
- providing a substrate;
- forming a buffer layer on the substrate;
- performing a hydrogen treatment on the buffer layer;
- and
- forming a group-III nitride semiconductor layer on the buffer layer.
A method of forming a group-III nitride semiconductor layer on a light-emitting device, comprising:
- providing a substrate;
- forming a buffer layer on the substrate;
- removing the substrate;
- performing a hydrogen treatment on the buffer layer;
- and
- forming a group-III nitride semiconductor layer on the buffer layer.
Dependencies are inferred from the claim text.