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US 2003/0224544 A1Published application
Test method
AssigneeShipley Company, L.L.C.
InventorsAlfred John Prisco, Carleton James Barbour, Yujian You, Michael K. Gallagher, Kai Hu
Life of this patent
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Abstract
Methods for determining the extent and nature of porosity in dielectric materials, particularly in thin dielectric films, using electrochemical impedance spectroscopy are disclosed. Such methods are useful in the manufacture of integrated circuits having porous dielectric layers.
Claims11
A method for determining the nature of pore interconnectivity in a dielectric material comprising the steps of:
- a) depositing a conductive solution on a surface of a dielectric material;
- b) making electrical contact with the conductive solution and the side of the dielectric material opposite to the conductive solution;
- c) applying a potential to the dielectric material;
- and d) measuring a response to the applied potential.
1 more element
A method of manufacturing an integrated circuit comprising the steps of:
- a) disposing a dielectric material on an electronic device substrate;
- b) curing the dielectric material;
- c) depositing a conductive solution on a surface of a dielectric material;
- d) making electrical contact with the conductive solution and the side of the dielectric material opposite to the conductive solution;
- e) applying a potential to the dielectric material;
- and f) measuring the impedance, capacitance or current.
3 more elements
An apparatus for manufacturing integrated circuits comprising:
- a) a means for dispensing a conductive solution on a dielectric material on an electronic device substrate;
- b) a first electrical contact for contacting the conductive solution;
- c) a second electrical contact for contacting the dielectric material opposite to the conductive solution;
- d) means for applying a potential;
- and e) means for measuring a response to the applied potential.
2 more elements
Dependencies are inferred from the claim text.